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South Korean Science and Technology, developed a..

Source:本站 Date:2016-01-07 

Teams from Korea Institute of Science and Technology (Korea Advanced Institute of Science and Technology, KAIST) has developed a high-performance field effect transistor for ultra-thin polymeric insulator. They use a variety of surface vaporization monomer successfully prepared polymeric film, such as plastic, these universal insulator for future applications in electronics foundation. The study was published online on March 9 in "Nature Materials" (Nature Materials) magazine.

Modern electronic devices we use in everyday life, from mobile phones, computers to flat panel displays, field effect transistors everywhere. In addition to the three electrodes (a gate (Gate), a source electrode (source) and drain (Drain)), the FET further comprises an insulating layer and a semiconductor channel layer. FET within the insulating layer can effectively control the conductivity of the semiconductor channel, to thereby control a current within the transistor. In order to make the stable operation of low-power FET, the application of ultra-thin insulating layer is very important. Because the oxide and nitride and other inorganic material has excellent insulating properties and reliability of the insulating layer is usually from such inorganic material in silicon and glass and other hard surfaces. However, due to the high hardness and high temperatures of these processes for preparing the insulating layer, they are difficult for flexible electronic devices.

In recent years, a large number of researchers, the polymer as optimistic about the prospects of an insulating material to study, in order to apply a flexible non-traditional and emerging semiconductor substrate material. However, conventional techniques for preparing polymer insulator covering the surface with a very small thickness is still insufficient, hindering the application of the polymer insulator FET run at low voltage state.

A by Professor Sung Gap and electronic engineering at KAIST (KAIST) biochemical engineering at Seunghyup Yoo, Byung Jin Cho research team led by Professor developed a polymer organic insulating layer "pV3D3". The use of this insulating layer is called "chemical vapor sedimentation (ICVD)" dry through vapor-phase technique is made, it can not lose a perfect insulating properties, the thickness is sufficient to narrow the range of 10 nanometers (nm) of the. iCVD process is to get gaseous monomers and initiator in contact with each other in a low vacuum, eventually deposited on the substrate conformal polymeric film having good insulation properties.iCVD conventional art is not the same, very pure and uniform thin polymeric film is not actually a large surface area or the underlying constraints generated problems associated with surface tension will be resolved. And most iCVD polymer at room temperature generated, reducing the tension applied to the substrate and produce damage. Research team by using pV3D3 insulating layer, developed using a variety of materials such as organic semiconductors, graphene oxide and low-power, high-performance FET proved pV3D3 broad applicability to a variety of materials. They also used a conventional packing tape as the substrate, creating a kind of paste, removable electronic component

In collaboration with Dongguk University (Dongguk University) is Professor Noh Yong-Young, the research team successfully combines pV3D3 insulating layer on the bottom of a large-scale developed a flexible transistor arrays. Professor Im said:. "ICVD using technology obtained pV3D3 has small size and broad applicability for polymeric insulators is unprecedented even our iCVD pV3D3 polymeric film thickness is reduced to 10 nanometers, which show still comparable insulative inorganic insulating layer.

We look forward to this progress can greatly benefit the development of flexible electronic devices, which will be on wearable computers and other emerging electronic devices play a key role in the success. "Summary: The researchers developed a high-performance thin for a field effect transistor (field-effect transistors, FETs) polymerization of monomers in an insulator they use a variety of surface vaporization successfully prepared polymeric film, such as plastic, these Cape. suitable insulators for future applications in electronics foundation.